规格：在电阻RDS（上） 0.016ohm,
VISHAY
场效应管, MOSFET, P 通道, -30V, -8A, TSOP-6
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.8 A, -30 V, 0.016 ohm, -10 V, -2.1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 6.8 A, 20 V, 0.016 ohm, 4.5 V, 650 mV
(EN)
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.016 ohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.016 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -61 A, -60 V, 0.016 ohm, -4.5 V, -1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 30 V, 0.016 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 37 A, 80 V, 0.016 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 30 A, 40 V, 0.016 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 8A, 30V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道, -30V, 8.8A, SOIC
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 6.3 A, 20 V, 0.016 ohm, 4.5 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 150 V, 0.016 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -60V, 0.016Ω, -61A, TO-252-3
(EN)VISHAY
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.016 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.016 ohm, 10 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8 A, -12 V, 0.016 ohm, -4.5 V, -1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -8 A, -30 V, 0.016 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 150 V, 0.016 ohm, 10 V, 3 V
(EN)
WOLFSPEED
单晶体管 双极, 双N沟道, 168 A, 1.2 kV, 0.016 ohm, 20 V, 2.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -9.4 A, -20 V, 0.016 ohm, -4.5 V, -500 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.8 A, -30 V, 0.016 ohm, -10 V, -2.1 V
(EN)
NXP
场效应管, MOSFET, N沟道, 30V, 0.016Ω, 6.7A, TSOP-6
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 6.8 A, 20 V, 0.016 ohm, 4.5 V, 650 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 8 A, 30 V, 0.016 ohm, 10 V, 3 V
(EN)
