规格：在电阻RDS（上） 0.01ohm,
INFINEON
晶体管, MOSFET, N沟道, 8.5 A, 25 V, 0.01 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -11.4 A, -30 V, 10 mohm, -10 V, -2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11 A, -40 V, 0.01 ohm, -10 V, -1.4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.01 ohm, 10 V, 3 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 28 A, 30 V, 0.01 ohm, 10 V, 1.2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -14.9 A, -30 V, 0.01 ohm, -10 V, -1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 40 V, 0.01 ohm, 4.5 V, 1.2 V
(EN)
INFINEON
场效应管, MOSFET, N沟道
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 53 A, 60 V, 0.01 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 89 A, 55 V, 0.01 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -70 A, -60 V, 0.01 ohm, -10 V, -2.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 77 A, 55 V, 10 mohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -11.4A, -30V, 2.5W
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -11 A, -30 V, 0.01 ohm, -20 V, -1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 89 A, 55 V, 0.01 ohm, 10 V, 1 V
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 64 A, 25 V, 0.01 ohm, 4.5 V, 1.35 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 140 A, 200 V, 0.01 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 0.01 ohm, -10 V, -1.5 V
(EN)
VISHAY
场效应管, MOSFET, P通道, -30V, 0.01Ω, -8.8A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 36 A, 34 V, 0.01 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.01OHM, 10A, SOIC-8
(EN)
INFINEON
MOSFET, P CHANNEL, -30V, -24A, PQFN-8
(EN)MICROCHIP
晶体管, MOSFET, N沟道, 48 A, 25 V, 0.01 ohm, 4.5 V, 1.35 V
(EN)
