规格：在电阻RDS（上） 0.004ohm,
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.004 ohm, 5 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.004 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 86 A, 30 V, 0.004 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 20 V, 0.004 ohm, 4.5 V, 600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 40V, 0.004Ω, 145A, TO-252-3
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.004 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -40 A, -20 V, 0.004 ohm, -10 V, -2.2 V
(EN)NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 100 A, 60 V, 0.004 ohm, 10 V, 1.7 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 35 A, 30 V, 0.004 ohm, 10 V, 1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 162 A, 40 V, 4 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 2.7 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.004 ohm, 10 V, 1 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 75 A, 30 V, 0.004 ohm, 10 V, 800 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 30 V, 0.004 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 95 A, 100 V, 0.004 ohm, 10 V, 3.4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.004 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.004 ohm, 10 V, 3.7 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, VSON-8
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 2.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 2.7 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 35 A, 30 V, 0.004 ohm, 10 V, 1.4 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 2.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 17.5 A, 40 V, 0.004 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 17.5 A, 40 V, 0.004 ohm, 10 V, 2.5 V
(EN)
