规格：在电阻RDS（上） 0.075ohm,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.5 A, 35 V, 0.075 ohm, 10 V, 2.6 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.075 ohm, -10 V, -2.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 750 mA, 20 V, 0.075 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 55 V, 0.075 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 0.075 ohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.075 ohm, -8 V, -950 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 200 V, 75 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 30 A, 200 V, 0.075 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 17A, D-PAKS
(EN)
WOLFSPEED
Silicon Carbide Power MOSFET, N Channel, 30.8 A, 1.2 kV, 0.075 ohm, 15 V, 2.5 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 3.5 A, 20 V, 0.075 ohm, 4.5 V, 500 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3.3 A, 100 V, 0.075 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.8 A, 55 V, 0.075 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, -4A, SOIC-8
(EN)VISHAY
晶体管, MOSFET, N沟道, 38 A, 250 V, 75 mohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -2 A, -12 V, 0.075 ohm, -4.5 V, -1 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 35 A, 600 V, 0.075 ohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 17.5 A, 100 V, 0.075 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.075 ohm, 4.5 V, 1 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -2 A, -12 V, 0.075 ohm, -4.5 V, -1 V
(EN)ROHM
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.075 ohm, 4.5 V, 1 V
(EN)ROHM
晶体管, MOSFET, P沟道, -2 A, -12 V, 0.075 ohm, -4.5 V, -1 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 46 A, 600 V, 0.075 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 0.075 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 750 mA, 20 V, 0.075 ohm, 10 V, 1.7 V
(EN)
