规格：在电阻RDS（上） 0.09ohm,
INFINEON
晶体管, MOSFET, P沟道, -2.6 A, -20 V, 0.09 ohm, -4.5 V, -1.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 90 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 6 A, 42 V, 0.09 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.2 A, -30 V, 0.09 ohm, -10 V, -1.15 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.09 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.6 A, 150 V, 0.09 ohm, 10 V, 5.5 V
(EN)
INTERNATIONAL RECTIFIER
功率场效应管, MOSFET, P沟道, HEXFET, -20V, -2.6A, SOT-23
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -4.3 A, -20 V, 0.09 ohm, -4.5 V, -700 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -3 A, -20 V, 0.09 ohm, -4.5 V, -700 mV
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 31 A, 650 V, 0.09 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 9 A, 55 V, 0.09 ohm, 12 V, 1.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.09 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 31 A, 650 V, 0.09 ohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, AEC-Q101, N沟道, 4.2 A, 20 V, 0.09 ohm, 4.5 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.9 A, 60 V, 0.09 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 600 V, 0.09 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 17A, D2-PAK
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 650 V, 0.09 ohm, 10 V, 3 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 3.4 A, 80 V, 0.09 ohm, 10 V, 2.5 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 3.4 A, 80 V, 0.09 ohm, 10 V, 2.5 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 32.4 A, 650 V, 0.09 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 600 V, 0.09 ohm, 10 V, 3 V
(EN)
NTE ELECTRONICS
芯片, 高速开关, MOSFET, N沟道, 20A, TO220-3
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 6 A, 42 V, 0.09 ohm, 10 V, 1.6 V
(EN)ROHM
双路场效应管, MOSFET, N和P沟道, 3.4 A, 80 V, 0.09 ohm, 10 V, 2.5 V
(EN)
