规格：在电阻RDS（上） 0.09ohm,
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -3.1 A, -40 V, 0.09 ohm, -10 V, -1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 2.5 A, 20 V, 0.09 ohm, 4.5 V, 250 mV
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -4.3 A, -20 V, 0.09 ohm, -4.5 V, -700 mV
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -4.3 A, -20 V, 0.09 ohm, -4.5 V, -700 mV
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 650 V, 0.09 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 31 A, 650 V, 0.09 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.09 ohm, 10 V, 4 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -4.3 A, -20 V, 0.09 ohm, -4.5 V, -700 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -2.6 A, -20 V, 0.09 ohm, -4.5 V, -1.1 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 1.5 A, 8 V, 0.09 ohm, 4.5 V, 800 mV
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET
(EN)
