规格：在电阻RDS（上） 0.18ohm,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.18 ohm, 5 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14 A, 150 V, 0.18 ohm, 10 V, 5.5 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -1.5 A, -40 V, 0.18 ohm, -10 V, -1.7 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 6.7 A, 20 V, 0.18 ohm, 4.5 V, 600 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.9 A, -60 V, 0.18 ohm, -10 V, -3 V
(EN)
VISHAY
MOSFET, N & P CHANNEL, 20V, 6.7A, TSSOP-8
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 9 A, 100 V, 0.18 ohm, 10 V, 2.6 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 13 A, 550 V, 0.18 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16 A, 650 V, 0.18 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道与P沟道, 20V, 0.18Ω, 700mA, SC-70-6
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 1.5 A, 20 V, 0.18 ohm, 4.5 V, 400 mV
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16 A, 650 V, 0.18 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 180 mohm, 10 V, 2 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 14 A, 600 V, 0.18 ohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 12 A, 250 V, 0.18 ohm, 10 V, 5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16.4 A, 650 V, 0.18 ohm, 10 V, 3 V
(EN)
NTE ELECTRONICS
芯片, MOSFET增强型高速开关, 125W, 18A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 550 V, 0.18 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 550 V, 0.18 ohm, 10 V, 3 V
