规格：在电阻RDS（上） 0.23ohm,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2 A, 100 V, 0.23 ohm, 10 V, 4 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 0.23 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -8.83 A, -60 V, 0.23 ohm, -6.2 V, -3 V
(EN)
VISHAY
MOSFET, N CHANNEL, 600V, 15A, TO-220AB-3
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18 A, 500 V, 0.23 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -8.8 A, -60 V, 0.23 ohm, -10 V, -3 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.6 A, -60 V, 0.23 ohm, -10 V, -2 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16.1 A, 650 V, 0.23 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 15A, TO-220F
(EN)
VISHAY
MOSFET, N CHANNEL, 600V, 15A, TO-263-3
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 16.1 A, 650 V, 0.23 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 0.23 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2 A, 100 V, 0.23 ohm, 10 V, 4 V
(EN)
