规格：在电阻RDS（上） 0.38ohm,
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -780 mA, -20 V, 0.38 ohm, -4.5 V, -1.2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 930 mA, 30 V, 0.38 ohm, 4.5 V, 1 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.38 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.4 A, 200 V, 0.38 ohm, 10 V, 5.5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.38 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.38 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -780 mA, -20 V, 0.38 ohm, -4.5 V, -1.2 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 380 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 14 A, 600 V, 0.38 ohm, 10 V, 3.75 V
(EN)
