规格：在电阻RDS（上） 0.36ohm,
INFINEON
晶体管, MOSFET, N沟道, 9 A, 550 V, 0.36 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 15 A, 650 V, 0.36 ohm, 10 V, 5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 15.1 A, 650 V, 0.36 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11.5 A, -200 V, 0.36 ohm, -10 V, -5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 16 A, 500 V, 0.36 ohm, 10 V, 5 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, -1.6A, SOT-23-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 9 A, 550 V, 0.36 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -670 mA, -20 V, 0.36 ohm, -4.5 V, -1.4 V
(EN)
