规格：在电阻RDS（上） 0.16ohm,
INFINEON
晶体管, MOSFET, N沟道, 1.9 A, 55 V, 0.16 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, DUAL N CHANNEL, 20V, 0.16OHM, 1.2A, SC-70-6
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.7 A, 55 V, 160 mohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 0.16 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 19A, TO220AB-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 1.2 A, 20 V, 0.16 ohm, 4.5 V, 800 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 19 A, 650 V, 0.16 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.16 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 560 V, 0.16 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 20.6 A, 600 V, 0.16 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.16 ohm, 10 V, 4.5 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 22 A, 1.2 kV, 0.16 ohm, 18 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 24 A, 500 V, 0.16 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.9 A, 55 V, 0.16 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 32 A, 500 V, 160 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 50 A, 600 V, 0.16 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6.5 A, 100 V, 0.16 ohm, 10 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 19A, TO-220FP-3
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 19A, TO-263-3
(EN)WOLFSPEED
功率场效应管, MOSFET, N沟道, 19 A, 1.2 kV, 0.16 ohm, 20 V, 2.6 V
(EN)
