规格：在电阻RDS（上） 0.185ohm,
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 1.5 A, 30 V, 0.185 ohm, 8 V, 850 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.185 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 150 V, 185 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.185 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 185 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 0.185 ohm, -4.5 V, -1.4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 100V, 10A, D-PAK
(EN)
VISHAY
晶体管, MOSFET, N沟道, 22 A, 500 V, 0.185 ohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 42 A, 600 V, 0.185 ohm, 10 V, 4.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 150 V, 0.185 ohm, 10 V, 5 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 1.5 A, 30 V, 0.185 ohm, 8 V, 850 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.185 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1.2 A, 30 V, 0.185 ohm, 4.5 V, 1 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 1.3 A, 30 V, 0.185 ohm, 4.5 V, 1.6 V
(EN)
