规格：在电阻RDS（上） 1.5ohm,
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 238 mA, 20 V, 1.5 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 560mA SOT-23
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 600 mA, 60 V, 1.5 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 600 mA, 200 V, 1.5 ohm, 10 V, 4 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 600 mA, 60 V, 1.5 ohm, 10 V, 3 V
(EN)
SEMELAB
晶体管, MOSFET, N沟道, 8 A, 160 V, 1.5 ohm, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 200 V, 1.5 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.5 A, 500 V, 1.5 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 20V, 238mA, SC-75
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3.6 A, -200 V, 1.5 ohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 3 A, -150 V, 1.5 ohm, 10 V, 3.8 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 3.5 A, -200 V, 1.5 ohm, -10 V, -4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.2 A, 600 V, 1.5 ohm, 10 V, 3 V
(EN)
VISHAY SILICONIX
场效应管, MOSFET, N沟道
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 1 A, 60 V, 1.5 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 3.3 A, 200 V, 1.5 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.1 A, 500 V, 1.5 ohm, 10 V, 4 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 800 mA, 100 V, 1.5 ohm, 10 V, 800 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, 3.6 A, -200 V, 1.5 ohm, -10 V, -4 V
(EN)
SEMELAB
晶体管, MOSFET, P沟道, 8 A, -160 V, 1.5 ohm, -1.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.6 A, 800 V, 1.5 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.4 A, 500 V, 1.5 ohm, 10 V, 3.75 V
(EN)SEMELAB
晶体管, MOSFET, P沟道, 8 A, -160 V, 1.5 ohm, -1.5 V
(EN)
