规格：在电阻RDS（上） 1.5ohm,
DIODES INC.
双路场效应管, MOSFET, 半桥接, N和P沟道, 1.8 A, 60 V, 1.5 ohm, 10 V, 3 V
(EN)
SEMELAB
晶体管, MOSFET, N沟道, 8 A, 160 V, 1.5 ohm, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 5.8 A, 800 V, 1.5 ohm, 10 V, 5 V
(EN)
VISHAY
MOSFET, P CHANNEL, -200V, -3.6A, TO-252-3
(EN)SEMELAB
晶体管, MOSFET, P沟道, 8 A, -200 V, 1.5 ohm, -1.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.2 A, 800 V, 1.5 ohm, 10 V, 3.75 V
(EN)SEMELAB
晶体管, MOSFET, N沟道, 8 A, 200 V, 1.5 ohm, 1.5 V
(EN)
SEMELAB
晶体管, MOSFET, P沟道, 8 A, -200 V, 1.5 ohm, -1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 960 mA, 200 V, 1.5 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 960 mA, 200 V, 1.5 ohm, 10 V, 4 V
(EN)
VISHAY
MOSFET, N CHANNEL, 200V, 960mA, SOT-223-4
(EN)INTERNATIONAL RECTIFIER
晶体管, MOSFET, N沟道, 4.5 A, 500 V, 1.5 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -150V, 3A, POWER 33
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 560 mA, 30 V, 1.5 ohm, 4 V, 1.4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 560 mA, 30 V, 1.5 ohm, 4 V, 800 mV
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 560mA SOT-23, 整卷
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.5 A, 500 V, 1.5 ohm, 10 V, 4 V
(EN)
TOSHIBA
功率场效应管, MOSFET, 通用, N沟道, 8 A, 1 kV, 1.5 ohm, 10 V, 3.5 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 500 mA, 30 V, 1.5 ohm, 4 V, 400 mV
(EN)SEMELAB
晶体管, MOSFET, N沟道, 8 A, 200 V, 1.5 ohm, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 3 A, -150 V, 1.5 ohm, 10 V, 3.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 5.8 A, 800 V, 1.5 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 200 V, 1.5 ohm, 10 V, 4 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 500V, 4.5A TO-220
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 560 mA, 30 V, 1.5 ohm, 4 V, 1.4 V
(EN)
