
VISHAY
场效应管, MOSFET, P沟道, -60V, 6.7A

STMICROELECTRONICS
单晶体管, IGBT, 60 A, 1.55 V, 258 W, 650 V, TO-263, 3 引脚

INFINEON
功率场效应管, MOSFET, N沟道, 8.7 A, 650 V, 0.378 ohm, 10 V, 4 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9 A, 800 V, 0.78 ohm, 10 V, 3.75 V

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 120 V, 110 MHz, 500 mW, 50 mA, 300 hFE

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 62 A, 200 V, 0.0229 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 60 A, 30 V, 9 mohm, 10 V, 1.9 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 500 V, 0.7 ohm, 10 V, 4 V

ON SEMICONDUCTOR
单晶体管 双极, NPN, 65 V, 100 MHz, 225 mW, 100 mA, 200 hFE

INFINEON
晶体管, MOSFET, N沟道, 33 A, 150 V, 56 mohm, 10 V, 5.5 V

NEXPERIA
单晶体管 双极, AEC-Q101, NPN, 45 V, 100 MHz, 280 mW, 100 mA, 110 hFE