
INFINEON
晶体管, MOSFET, N沟道, 21 A, 560 V, 0.16 ohm, 10 V, 3 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.5 A, 800 V, 0.35 ohm, 4 V, 4 V

STMICROELECTRONICS
晶体管, MOSFET, N沟道, 55 A, 30 V, 0.014 ohm, 16 V, 1.7 V

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 120 V, 110 MHz, 300 mW, 50 mA, 300 hFE

ON SEMICONDUCTOR
达林顿双极晶体管

INFINEON
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.22 ohm, 10 V, 3 V

ON SEMICONDUCTOR
单晶体管 双极, PNP, -80 V, 40 MHz, 2 W, -10 A, 40 hFE

ON SEMICONDUCTOR
单晶体管 双极, NPN, 160 V, 225 mW, 600 mA, 30 hFE

STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 550 V, 250 mohm, 10 V, 4 V

FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V

DIODES INC.
单晶体管 双极, 达林顿, PNP, 120 V, 160 MHz, 2 W, -2 A, 3000 hFE

STMICROELECTRONICS
单晶体管, IGBT, 20 A, 2.5 V, 60 W, 600 V, TO-220, 3 引脚

FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V

INFINEON
功率场效应管, MOSFET, N沟道, 16.7 A, 800 V, 0.25 ohm, 10 V, 3 V

INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0074 ohm, 10 V, 2.7 V

INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.24 ohm, 10 V, 3 V

INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.34 ohm, 10 V, 3 V

DIODES INC.
单晶体管 双极, PNP, -45 V, 200 MHz, 300 mW, -100 mA, 330 hFE

INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0018 ohm, 10 V, 3 V

INFINEON
晶体管, MOSFET, N沟道, 70 A, 80 V, 0.0084 ohm, 10 V, 2.8 V