INFINEON

单晶体管, IGBT, N通道, 28 A, 2.88 V, 100 W, 600 V, TO-220AB, 3 引脚

NEXPERIA

单管二极管 齐纳, 22 V, 250 mW, SOT-23, 5 %, 3 引脚, 150 °C

NXP

晶体管 双极-射频, NPN, 18 V, 4 GHz, 1 W, 150 mA, 70 hFE

STMICROELECTRONICS

单晶体管 双极, 达林顿, NPN, 350 V, 65 W, 15 A, 300 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 23 A, 600 V, 0.132 ohm, 10 V, 3.5 V

ON SEMICONDUCTOR

晶体管, MOSFET, P沟道, 400 mA, -20 V, 800 mohm, -10 V, -1.9 V

VISHAY

肖特基整流器, 40 V, 5.5 A, 单, TO-252AA, 3 引脚, 510 mV

DIODES INC.

二极管 小信号, 双共阴极, 75 V, 300 mA, 1.25 V, 4 ns, 2 A

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 75V, 130A, TO-220AB

ON SEMICONDUCTOR

肖特基整流器, 双共阴极, 100 V, 60 A, TO-263, 3 引脚, 980 mV

ON SEMICONDUCTOR

单晶体管 双极, NPN, 100 V, 3 MHz, 2 W, 3 A, 10 hFE

LITTELFUSE

晶闸管, 600 V, 35 mA, 16 A, 25 A, TO-220AB, 3 引脚

VISHAY

场效应管, MOSFET, P沟道

ROHM

晶体管, MOSFET, 低电压, P沟道, 3.2 A, -20 V, 125 mohm, -4.5 V, -2 V

VISHAY

齐纳二极管, 8.2V, 225mW, SOT-23

DIODES INC.

单晶体管 双极, NPN, 60 V, 150 MHz, 500 mW, 1 A, 300 hFE

ON SEMICONDUCTOR

射频双极晶体管

MULTICOMP

小信号肖特基二极管, 单, 70 V, 70 mA, 1 V, 100 mA, 150 °C

TOSHIBA

晶体管, MOSFET, N沟道, 500 mA, 500 V, 18 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 290 A, 100 V, 2 mohm, 20 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 70 A, 60 V, 14 mohm, 10 V, 4 V

INFINEON

功率场效应管, MOSFET, N沟道, 3.2 A, 600 V, 1.26 ohm, 10 V, 3 V

MULTICOMP

小信号肖特基二极管, 单, 30 V, 300 mA, 400 mV, 1 A, 125 °C

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 46 A, 800 V, 0.067 ohm, 10 V, 4.5 V

VISHAY

功率场效应管, MOSFET, N沟道, 6 A, 1 kV, 2 ohm, 10 V, 4 V