
VISHAY
晶体管, MOSFET, N沟道, 110 A, 30 V, 0.0033 ohm, 10 V, 1 V

INFINEON
晶体管 双极-射频, NPN, 6 V, 14 GHz, 210 mW, 35 mA, 90 hFE

LITTELFUSE
三端双向可控硅, 800 V, 12 A, TO-220AB, 50 mA, 1.7 V, 20 W

ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.53 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 8 mohm, 10 V, 1.8 V

INFINEON
单晶体管, IGBT, 15 A, 1.65 V, 33.3 W, 650 V, TO-220, 3 引脚

LITTELFUSE
三端双向可控硅, 800 V, 8 A, TO-220AB, 50 mA, 1.7 V, 20 W

ON SEMICONDUCTOR
晶体管, NPN

INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 7.8 mohm, 10 V, 4 V

NEXPERIA
晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0065 ohm, 10 V, 3 V

LITTELFUSE
可控硅晶体管, 400V, 15A, TO220

INFINEON
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 0.56 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 100 V, 80 W, 12 A, 100 hFE

ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.34 ohm, 10 V, 4.5 V

INFINEON
晶体管, MOSFET, N沟道, 11.1 A, 500 V, 0.45 ohm, 13 V, 3 V