VISHAY

晶体管, MOSFET, N沟道, 30 A, 500 V, 0.125 ohm, 10 V, 3 V

NEXPERIA

晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0041 ohm, 10 V, 3 V

ROHM

单晶体管 双极, NPN, 30 V, 320 MHz, 500 mW, 1 A, 270 hFE

INFINEON

功率场效应管, MOSFET, N沟道, 10.6 A, 650 V, 0.34 ohm, 10 V, 3 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 80 V, 50 MHz, 50 W, 10 A, 40 hFE

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 5.8 A, 900 V, 2 ohm, 10 V, 3.75 V

INFINEON

晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0078 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 71 A, 55 V, 13 mohm, 10 V, 4 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 4.4 A, 500 V, 1.5 ohm, 10 V, 3.75 V

INFINEON

单晶体管, IGBT, 15 A, 1.6 V, 33.3 W, 650 V, TO-220, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 81 A, 60 V, 12 mohm, 10 V, 4 V

VISHAY

MOSFET, N CHANNEL, 500V, 2.4A, TO-252-3

ON SEMICONDUCTOR

场效应管, MOSFET, P沟道, -60V, 0.016Ω, -61A, TO-252-3

INFINEON

晶体管, MOSFET, N沟道, 49 A, 55 V, 0.0175 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, N沟道, 31 A, 200 V, 82 mohm, 10 V, 5.5 V

VISHAY

场效应管, MOSFET, N沟道

VISHAY

晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 5 A, 200 V, 0.6 ohm, 10 V, 4 V

ON SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.9 V

ON SEMICONDUCTOR

射频双极晶体管

INFINEON

功率场效应管, MOSFET, N沟道, 50 A, 600 V, 0.034 ohm, 10 V, 3.5 V

INFINEON

单晶体管, IGBT, 45 A, 2.77 V, 200 W, 1.2 kV, TO-247AC, 3 引脚

INFINEON

单晶体管, IGBT, 80 A, 3.39 V, 595 W, 1.2 kV, TO-274AA, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 58 A, 800 V, 0.054 ohm, 10 V, 4.5 V

INFINEON

功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V