VISHAY

功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 2 V

PANASONIC ELECTRONIC COMPONENTS

肖特基整流器, 双共阴极, 30 V, 130 mA, SOT-23, 3 引脚, 550 mV

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 20.6 A, 600 V, 0.16 ohm, 10 V, 2.5 V

INFINEON

晶体管, MOSFET, P沟道, 13 A, -150 V, 290 mohm, -10 V, -4 V

INFINEON

晶体管, MOSFET, N沟道, 49 A, 55 V, 0.0175 ohm, 10 V, 4 V

INFINEON

功率场效应管, MOSFET, N沟道, 17 A, 800 V, 290 mohm, 10 V, 3 V

VISHAY

功率场效应管, MOSFET, N沟道, 11 A, 600 V, 600 mohm, 10 V, 4 V

ROHM

二极管 小信号, 双系列, 100 V, 1.25 V, 3 μs, 4 A

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, PNP, -40 V, 250 MHz, 350 mW, -200 mA, 30 hFE

STMICROELECTRONICS

小信号肖特基二极管, 单, 60 V, 30 A, 615 mV, 600 A, 150 °C

INFINEON

晶体管, MOSFET, N沟道, 13 A, 200 V, 235 mohm, 10 V, 5.5 V

STMICROELECTRONICS

三端双向可控硅, 600 V, 50 mA, 1 W, 1.5 V, RD-91, 400 A

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 8.5 A, 500 V, 0.4 ohm, 10 V, 3 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 12 A, 60 V, 80 mohm, 10 V, 2 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 2.9 A, 12 V, 0.037 ohm, 4.5 V, 1 V

INFINEON

单晶体管, IGBT, 11 A, 1.75 V, 58 W, 600 V, TO-252, 3 引脚

VISHAY

场效应管, MOSFET, N沟道

ON SEMICONDUCTOR

肖特基整流器, 80 V, 20 A, 双共阴极, TO-220, 3 引脚, 950 mV

ON SEMICONDUCTOR

单晶体管 双极, 音频, NPN, 250 V, 4 MHz, 200 W, 16 A, 75 hFE

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 20 A, 500 V, 250 mohm, 10 V, 4 V

NEXPERIA

单管二极管 齐纳, 15 V, 250 mW, SOT-23, 2 %, 3 引脚, 150 °C

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.135 ohm, 10 V, 3 V

VISHAY

晶闸管, 1600 V, 60 mA, 20 A, 30 A, TO-247AC, 3 引脚

NEXPERIA

二极管 小信号, 单, 110 V, 250 mA, 1.25 V, 50 ns, 10 A

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 274 A, 40 V, 0.0014 ohm, 10 V, 1.7 V