INFINEON

晶体管, MOSFET, N沟道, 120 A, 80 V, 0.002 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 18 A, 55 V, 0.06 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, N沟道, 51 A, 55 V, 13.5 mohm, 10 V, 3 V

ON SEMICONDUCTOR

晶闸管, SCR, 25A, 100V, TO-220AB, 25A, 100V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 12 A, 500 V, 0.48 ohm, 10 V, 3.9 V

VISHAY

晶体管, MOSFET, P沟道, 90 A, -60 V, 0.0074 ohm, -10 V, -1 V

NEXPERIA

小信号肖特基二极管, 双共阴极, 40 V, 200 mA, 300 mV, 1 A, 125 °C

VISHAY

齐纳二极管, 68V, 300mW, SOT-23

INFINEON

功率场效应管, MOSFET, N沟道, 18 A, 650 V, 0.11 ohm, 10 V, 3.5 V

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, NPN, 100 V, 4 MHz, 160 W, 20 A, 18000 hFE

NEXPERIA

单晶体管 双极, 达林顿, NPN, 45 V, 200 MHz, 1.3 W, 1 A, 2000 hFE

INFINEON

晶体管, MOSFET, N沟道, 59 A, 100 V, 14 mohm, 10 V, 2 V

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 10 A, 800 V, 0.93 ohm, 10 V, 5 V

INFINEON

功率场效应管, MOSFET, N沟道, 77.5 A, 600 V, 0.037 ohm, 10 V, 3 V

TEXAS INSTRUMENTS

功率晶体管

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, NPN, 100 V, 80 W, 8 A, 200 hFE

FUJI ELECTRIC

功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 79 A, 60 V, 0.0071 ohm, 10 V, 4 V

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 100V, 9.7A, TO-220AB

STMICROELECTRONICS

单晶体管 双极, NPN, 60 V, 50 W, 10 A, 60 hFE

INFINEON

单晶体管, IGBT, 25 A, 2.2 V, 190 W, 1.2 kV, TO-247, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 80 A, 60 V, 0.0042 ohm, 10 V, 1.7 V

VISHAY

晶体管, MOSFET, P沟道, 5.6 A, -100 V, 600 mohm, -10 V, -4 V

INFINEON

单晶体管, IGBT, 11 A, 1.75 V, 58 W, 600 V, TO-263, 3 引脚

STMICROELECTRONICS

单晶体管 双极, 达林顿, NPN, 100 V, 80 W, 12 A, 20000 hFE