INFINEON

功率场效应管, MOSFET, N沟道, 20 A, 650 V, 190 mohm, 10 V, 4.5 V

DIODES INC.

单晶体管 双极, 达林顿, NPN, 60 V, 170 MHz, 1 W, 500 mA, 10000 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0018 ohm, 10 V, 3.5 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 16 A, 800 V, 600 mohm, 10 V, 5 V

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 50 V, 300 MHz, 250 mW, 150 mA, 120 hFE

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 60 V, 40 MHz, 60 W, 4 A, 40 hFE

ON SEMICONDUCTOR/FAIRCHILD

双极性晶体管, NPN, HFE 40

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 40 A, 100 V, 0.028 ohm, 10 V, 1.7 V

DIODES INC.

单晶体管 双极, 达林顿, NPN, 60 V, 1 W, 800 mA, 10000 hFE

ON SEMICONDUCTOR

Schottky Rectifier, 45 V, 30 A, Dual Common Cathode, TO-220, 3 Pins, 730 mV

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V

VISHAY

场效应管, MOSFET, N沟道, 25W, D-PAK

VISHAY

晶体管, MOSFET, N沟道, 20 A, 500 V, 0.2 ohm, 10 V, 2 V

VISHAY

晶闸管, 1200 V, 150 mA, 35 A, 55 A, TO-247AC, 3 引脚

NEXPERIA

单晶体管 双极, PNP, 20 V, 300 mW, 2 A, 225 hFE

VISHAY

晶体管, MOSFET, N沟道, 7.7 A, 100 V, 270 mohm, 10 V, 4 V

NEXPERIA

晶体管, MOSFET, N沟道, 32 A, 30 V, 0.017 ohm, 10 V, 1.7 V

LITTELFUSE

可控硅, 8A

STMICROELECTRONICS

小信号肖特基二极管, 单, 100 V, 30 A, 870 mV, 530 A, 150 °C

VISHAY

晶体管, MOSFET, N沟道, 11 A, 500 V, 520 mohm, 10 V, 4 V

NEXPERIA

二极管 小信号, 单, 100 V, 215 mA, 1.25 V, 4 ns, 4 A

ROHM

单晶体管 双极, PNP, -120 V, 140 MHz, 200 mW, -50 mA, 180 hFE

ROHM

单晶体管 双极, PNP, -12 V, 400 MHz, 200 mW, -1.5 A, 270 hFE

ROHM

单晶体管 双极, NPN, 18 V, 1.5 GHz, 200 mW, 20 mA, 56 hFE

ROHM

单晶体管 双极, NPN, 11 V, 3.2 GHz, 200 mW, 50 mA, 56 hFE