规格：针脚数 3引脚,
INFINEON
晶体管, MOSFET, N沟道, 32 A, 560 V, 110 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 250 mohm, 30 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -100 V, 60 W, -8 A, 750 hFE
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 279 A, 60 V, 0.0016 ohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0155 ohm, 10 V, 2.7 V
INFINEON
功率场效应管, MOSFET, N沟道, 23.8 A, 600 V, 0.144 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -150 V, 300 MHz, 350 mW, -500 mA, 50 hFE
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9.5 A, 900 V, 400 mohm, 10 V, 3.75 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 10.4 A, -60 V, 55 mohm, -10 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 19 A, 200 V, 140 mohm, 10 V, 4 V
(EN)TAIWAN SEMICONDUCTOR
肖特基整流器, 45 V, 30 A, 双共阴极, TO-220AB, 3 引脚, 550 mV
(EN)INFINEON
单晶体管, IGBT, 60 A, 2.4 V, 375 W, 1.2 kV, TO-247, 3 引脚
(EN)
MULTICOMP
单晶体管 双极, 通用, NPN, 25 V, 150 MHz, 600 mW, 200 mA, 420 hFE
(EN)
STMICROELECTRONICS
三端双向可控硅, 600 V, 50 mA, 1 W, 1.3 V, TO-220AB, 160 A
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 通用, NPN, 80 V, 1 W, 1.2 A, 25 hFE
(EN)
