TEXAS INSTRUMENTS

晶体管, MOSFET, NexFET, N沟道, 150 A, 100 V, 0.0023 ohm, 10 V, 2.5 V

DIODES INC.

单晶体管 双极, PNP, 70 V, 160 MHz, 2 W, 2 A, 300 hFE

INFINEON

功率场效应管, MOSFET, N沟道, 23.8 A, 600 V, 0.14 ohm, 10 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 37.9 A, 600 V, 0.089 ohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, N沟道, 14 A, 250 V, 0.28 ohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 42 A, 40 V, 5.5 mohm, 10 V, 4 V

ROHM

单晶体管 双极, PNP, -30 V, 320 MHz, 500 mW, -1 A, 270 hFE

STMICROELECTRONICS

三端双向可控硅开关

INFINEON

晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0015 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 25 A, 55 V, 45 mohm, 10 V, 4 V

VISHAY

场效应管, MOSFET, P沟道, -40V, -50A, TO-252-3

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V

NEXPERIA

小信号肖特基二极管, 双共阳极, 70 V, 70 mA, 1 V, 100 mA, 150 °C

VISHAY

晶体管, MOSFET, P沟道, 12 A, -200 V, 500 mohm, -10 V, -4 V

VISHAY

功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.053 ohm, 10 V, 2.5 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 16 A, 60 V, 0.07 ohm, 10 V, 1 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 8 A, 800 V, 0.55 ohm, 10 V, 4 V

DIODES INC.

单晶体管 双极, PNP, -45 V, 200 MHz, 300 mW, -100 mA, 600 hFE

MULTICOMP

单晶体管 双极, PNP, -45 V, 125 MHz, 500 mW, -1 A, 250 hFE

INFINEON

功率场效应管, MOSFET, N沟道, 53.5 A, 600 V, 0.063 ohm, 10 V, 4 V

ON SEMICONDUCTOR

单晶体管 双极, NPN, 100 V, 40 W, 10 A, 100 hFE

STMICROELECTRONICS

单晶体管 双极, 通用, NPN, 300 V, 50 MHz, 350 mW, 500 mA, 40 hFE

ON SEMICONDUCTOR

单晶体管, IGBT, 240 A, 3.6 V, 30 W, 430 V, TO-220F, 3 引脚

STMICROELECTRONICS

单晶体管, IGBT, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 引脚

MULTICOMP

小信号肖特基二极管, 双系列, 70 V, 200 mA, 700 mV, 100 mA, 125 °C