
DIODES INC.
单晶体管 双极, NPN, 45 V, 300 MHz, 200 mW, 100 mA, 290 hFE

INFINEON
单晶体管, IGBT, 50 A, 2.3 V, 333 W, 600 V, TO-247, 3 引脚

INFINEON
晶体管, MOSFET, N沟道, 79 A, 100 V, 0.0026 ohm, 10 V, 2.7 V

VISHAY
功率场效应管, MOSFET, N沟道, 27 A, 600 V, 220 mohm, 10 V, 5 V

DIODES INC.
晶体管, MOSFET, P沟道, -5.9 A, -100 V, 150 mohm, -10 V, -4 V

ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 70 A, 2 V, 290 W, 600 V, TO-247, 3 引脚

INFINEON
单晶体管, IGBT, 32 A, 1.55 V, 140 W, 600 V, TO-220AB, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.0178 ohm, 10 V, 1.5 V

INFINEON
功率场效应管, MOSFET, N沟道, 68.5 A, 700 V, 0.037 ohm, 10 V, 4 V

INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 900 V, 0.39 ohm, 10 V, 3 V

INFINEON
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0039 ohm, 10 V, 4 V

INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.0027 ohm, 10 V, 1.7 V