DIODES INC.

单晶体管 双极, NPN, 40 V, 155 MHz, 2 W, 5 A, 450 hFE

INFINEON

晶体管, MOSFET, N沟道, 170 A, 75 V, 4.1 mohm, 10 V, 4 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, N沟道, 40 A, 300 V, 85 mohm, 10 V, 4 V

NEXPERIA

单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 100 mA, 150 hFE

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 11 A, 800 V, 350 mohm, 10 V, 4 V

NEXPERIA

单管二极管 齐纳, 5.6 V, 250 mW, TO-236AB, 5 %, 3 引脚, 150 °C

TEXAS INSTRUMENTS

晶体管, MOSFET, NexFET, N沟道, 100 A, 100 V, 0.0064 ohm, 10 V, 2.7 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 33 A, 250 V, 94 mohm, 10 V, 5 V

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 5.8 A, 800 V, 1.5 ohm, 10 V, 5 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -5.7 A, -200 V, 0.54 ohm, -10 V, -5 V

INFINEON

晶体管, MOSFET, N沟道, 80 A, 100 V, 15 mohm, 10 V, 4 V

VISHAY

场效应管, MOSFET, N沟道

ROHM

单晶体管, IGBT, 场截止沟道, 85 A, 1.6 V, 277 W, 650 V, TO-247N, 3 引脚

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 6 A, 1.2 kV, 1.95 ohm, 10 V, 4 V

NEXPERIA

单晶体管 双极, 达林顿, NPN, 80 V, 200 MHz, 1.3 W, 1 A, 2000 hFE

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -1.5 A, -20 V, 125 mohm, -4.5 V, -1 V

INFINEON

功率场效应管, MOSFET, N沟道, 37.9 A, 650 V, 0.09 ohm, 10 V, 3 V

INTERNATIONAL RECTIFIER

场效应管, MOSFET, P沟道, -55V, 74A, D2-PAK

VISHAY

场效应管, MOSFET, N沟道

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 160 A, 2.6 V, 250 W, 600 V, TO-264, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 80 V, 50 MHz, 1.67 W, 10 A, 60 hFE

INFINEON

晶体管, MOSFET, N沟道, 18.1 A, 500 V, 0.25 ohm, 13 V, 3 V

INFINEON

功率场效应管, MOSFET, N沟道, 53.5 A, 650 V, 0.063 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0014 ohm, 4.5 V, 2.5 V

STMICROELECTRONICS

小信号肖特基二极管, 单, 100 V, 20 A, 850 mV, 530 A, 150 °C