NEXPERIA

晶体管, MOSFET, N沟道, 90 A, 55 V, 6.6 mohm, 10 V, 2.3 V

INFINEON

晶体管, MOSFET, N沟道, 18.1 A, 500 V, 0.25 ohm, 13 V, 3 V

INFINEON

晶体管, MOSFET, P沟道, 19 A, -55 V, 100 mohm, -10 V, -4 V

INFINEON

单晶体管, IGBT, 47 A, 1.65 V, 206 W, 600 V, TO-247AD, 3 引脚

MICROCHIP

晶体管, MOSFET, N沟道, 30 mA, 500 V, 850 ohm, 0 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 10 A, 500 V, 520 mohm, 10 V, 3.75 V

VISHAY

MOSFET, P CHANNEL, -200V, -3.6A, TO-252-3

SOLID STATE

可控硅整流器, 200V V(DRM)

ON SEMICONDUCTOR

单晶体管 双极, PNP, -45 V, 200 MHz, 40 W, -4 A, 750 hFE

LITTELFUSE

三端双向可控硅, 800 V, 25 A, TO-220AB, 35 mA, 1.3 V, 500 mW

STMICROELECTRONICS

单晶体管 双极, NPN, 450 V, 20 MHz, 40 W, 500 mA, 50 hFE

INFINEON

功率场效应管, MOSFET, N沟道, 25 A, 650 V, 0.11 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -11.5 A, -200 V, 0.36 ohm, -10 V, -5 V

INFINEON

晶体管, IGBT, 单路, 1.65V, 47A, TO-247AD

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 1.5 A, 800 V, 3 ohm, 10 V, 3.75 V

MULTICOMP

单晶体管 双极, 通用, PNP, -75 V, 1 W, -2 A, 30 hFE

NEXPERIA

小信号肖特基二极管, 双共阴极, 30 V, 200 mA, 800 mV, 600 mA, 150 °C

INFINEON

单晶体管, IGBT, 60 A, 1.6 V, 160 W, 600 V, TO-247AC, 3 引脚

INFINEON

功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.34 ohm, 10 V, 3 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V

NEXPERIA

单晶体管 双极, PNP, 30 V, 200 MHz, 300 mW, 1 A, 450 hFE

ROHM

单晶体管 双极, NPN, 30 V, 320 MHz, 500 mW, 2 A, 200 hFE

INFINEON

晶体管, MOSFET, N沟道, 195 A, 40 V, 1.8 mohm, 10 V, 2 V

INFINEON

单晶体管, IGBT, 50 A, 2 V, 333 W, 600 V, TO-220, 3 引脚

ON SEMICONDUCTOR

晶体管 双极-射频, PNP, -60 V, 50 MHz, 1.5 W, -3 A, 12 hFE