INFINEON

单晶体管, IGBT, 28 A, 2.2 V, 167 W, 600 V, TO-220AB, 3 引脚

IXYS SEMICONDUCTOR

晶体管, MOSFET, LINEAR L2?, N沟道, 15 A, 500 V, 480 mohm, 10 V, 2.5 V

ON SEMICONDUCTOR

单晶体管, IGBT, 100 A, 1.75 V, 595 W, 650 V, TO-247, 3 引脚

ROHM

小信号肖特基二极管, 通用, 单, 25 V, 700 mA, 490 mV, 3 A, 125 °C

ROHM

小信号肖特基二极管, 双共阴极, 40 V, 30 mA, 370 mV, 200 mA, 125 °C

ROHM

单晶体管, IGBT, 场截止沟道, 48 A, 1.65 V, 174 W, 650 V, TO-247N, 3 引脚

ROHM

单晶体管, IGBT, 场截止沟道, 70 A, 1.6 V, 234 W, 650 V, TO-247N, 3 引脚

RENESAS

单晶体管, IGBT, 80 A, 1.7 V, 260.4 W, 600 V, TO-247, 3 引脚

ROHM

晶体管, MOSFET, P沟道, -4 A, -30 V, 0.032 ohm, -10 V, -2.5 V

ROHM

晶体管, MOSFET, N沟道, 2 A, 45 V, 0.13 ohm, 4.5 V, 1.5 V

ROHM

Silicon Carbide Power MOSFET, N Channel, 21 A, 650 V, 0.12 ohm, 18 V, 5.6 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 6 ohm, 10 V, 4 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V

STMICROELECTRONICS

Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V

DIODES INC.

晶体管, MOSFET, N沟道, 1.8 A, 100 V, 600 mohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 170 mA, 100 V, 1.2 ohm, 10 V, 1.7 V

NEXPERIA

单管二极管 齐纳, 6.8 V, 250 mW, TO-236AB, 5 %, 3 引脚, 150 °C

IXYS SEMICONDUCTOR

小信号肖特基二极管, 双共阴极, 200 V, 45 A, 860 mV, 450 A, 175 °C

INFINEON

单晶体管, IGBT, 通用, 60 A, 2.05 V, 187 W, 600 V, TO-247, 3 引脚

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, PNP, -200 V, 3 MHz, 150 W, -15 A, 400 hFE

LITTELFUSE

三端双向可控硅, 400 V, 50 mA, 500 mW, 1.3 V, TO-220AB, 110 A

LITTELFUSE

三端双向可控硅, 600 V, 50 mA, 500 mW, 2 V, TO-220, 290 A

ROHM

小信号肖特基二极管, 单, 25 V, 1 A, 450 mV, 3 A, 125 °C

ROHM

晶体管, MOSFET, N沟道, 300 mA, 30 V, 0.8 ohm, 10 V, 2.5 V

INFINEON

功率场效应管, MOSFET, N沟道, 8 A, 800 V, 650 mohm, 10 V, 3 V