NTE ELECTRONICS

晶体管, PNP, 60V, 30A, TO-3

INFINEON

晶体管, MOSFET, N沟道, 80 A, 75 V, 7340 μohm, 10 V, 2 V

NEXPERIA

二极管 小信号, 双共阳极, 90 V, 130 mA, 1.25 V, 4 ns, 4 A

STMICROELECTRONICS

单晶体管 双极, NPN, 450 V, 70 W, 2.5 A, 10 hFE

NEXPERIA

单管二极管 齐纳, 4.7 V, 250 mW, SOT-23, 5 %, 3 引脚, 150 °C

INFINEON

MOSFET, N-CH, 75V, 195A, TO-220AB-3

INFINEON

晶体管, MOSFET, N沟道, 80 A, 75 V, 0.00734 ohm, 20 V, 4 V

ON SEMICONDUCTOR

单晶体管, IGBT, 60 A, 2.2 V, 384 W, 1.2 kV, TO-247, 3 引脚

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 1.25 A, 800 V, 3.8 ohm, 10 V, 3.75 V

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 480 mohm, 10 V, 3.75 V

TOSHIBA

功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.19 ohm, 10 V, 3 V

STMICROELECTRONICS

晶闸管, 600 V, 15 mA, 8 A, 12 A, TO-220AB, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 通用, 80 A, 600 V, 349 W, 600 V, TO-247AB, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 4.6 A, 30 V, 31 mohm, 10 V, 1 V

VISHAY

肖特基整流二极管, 共阴极, 40A, TO-263AB

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 1.7 A, 30 V, 0.065 ohm, 4.5 V, 1.6 V

DIODES INC.

功率场效应管, MOSFET, N沟道, 6 A, 900 V, 1.7 ohm, 10 V, 4 V

DIODES INC.

功率场效应管, MOSFET, N沟道, 2.5 A, 900 V, 5.5 ohm, 10 V, 4 V

DIODES INC.

功率场效应管, MOSFET, N沟道, 2.5 A, 950 V, 5.5 ohm, 10 V, 4 V

DIODES INC.

晶体管, MOSFET, N沟道, 150 A, 40 V, 0.0034 ohm, 10 V, 3 V

DIODES INC.

晶体管, MOSFET, N沟道, 130 A, 60 V, 0.006 ohm, 10 V, 4 V

IXYS SEMICONDUCTOR

小信号肖特基二极管, 双共阴极, 30 V, 15 A, 440 mV, 140 A, 150 °C

ON SEMICONDUCTOR/FAIRCHILD

单晶体管, IGBT, 通用, 54 A, 2.7 V, 167 W, 600 V, TO-247, 3 引脚

INFINEON

MOSFET, N-CH, 75V, 87A, TO-220AB-3

VISHAY

场效应管, MOSFET, N沟道