规格：针脚数 3引脚,
INFINEON
单晶体管, IGBT, 标准速度, N通道, 57 A, 1.75 V, 200 W, 1.2 kV, TO-247AD, 3 引脚
(EN)
INFINEON
单晶体管, IGBT, 13 A, 1.8 V, 90 W, 600 V, TO-220AB, 3 引脚
(EN)
INFINEON
单晶体管, IGBT, 140 A, 1.7 V, 454 W, 600 V, TO-247AC, 3 引脚
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 46 A, 650 V, 0.069 ohm, 10 V, 5.5 V
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, 60 A, 3.5 V, 300 W, 1.2 kV, TO-263, 3 引脚
(EN)
NTE ELECTRONICS
双向晶闸管, 400V, 3A, TO-5
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 40 A, 1.65 V, 144 W, 650 V, TO-247N, 3 引脚
(EN)
DIODES INC.
肖特基整流器, TRENCH, 120 V, 20 A, 双共阴极, TO-220AB, 3 引脚, 790 mV
(EN)DIODES INC.
肖特基整流器, TRENCH, 120 V, 30 A, 双共阴极, TO-220AB, 3 引脚, 930 mV
(EN)DIODES INC.
肖特基整流器, TRENCH, 120 V, 40 A, 双共阴极, TO-220AB, 3 引脚, 880 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00121 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
单晶体管, IGBT, 6 A, 2.8 V, 25 W, 1.2 kV, TO-220FP, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6 A, 600 V, 450 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 16 A, 600 V, 0.2 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 19.5 A, 600 V, 0.15 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
肖特基整流器, 双共阴极, 45 V, 10 A, TO-220FP, 3 引脚, 550 mV
(EN)STMICROELECTRONICS
肖特基整流器, 双共阴极, 100 V, 20 A, TO-220AB, 3 引脚, 800 mV
(EN)IXYS SEMICONDUCTOR
晶闸管, 1200 V, 65 mA, 31 A, 49 A, TO-247AD, 3 引脚
(EN)IXYS SEMICONDUCTOR
小信号肖特基二极管, 双共阴极, 100 V, 15 A, 730 mV, 120 A, 175 °C
(EN)
