STMICROELECTRONICS

三端双向可控硅, 600 V, 25 mA, 1 W, 1.3 V, TO-220AB, 90 A

STMICROELECTRONICS

三端双向可控硅, 600 V, 35 mA, 1 W, 1 V, TO-263, 120 A

SEMELAB

晶体管, MOSFET, N沟道, 170 mA, 60 V, 3 ohm, 10 V, 1.4 V

INFINEON

晶体管, MOSFET, N沟道, 35 A, 150 V, 32 mohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 195 A, 40 V, 0.001 ohm, 10 V, 2.2 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 40 A, 60 V, 6.5 mohm, 10 V, 3 V

NEXPERIA

单晶体管 双极, 达林顿, NPN, 60 V, 200 MHz, 1.25 W, 1 A, 2000 hFE

WEEN SEMICONDUCTOR

三端双向可控硅, 600 V, 5 W, 1.5 V, TO-220, 65 A

NEXPERIA

晶体管, MOSFET, N沟道, 120 A, 75 V, 3.4 mohm, 10 V, 2.3 V

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 55V, 20A

INFINEON

功率场效应管, MOSFET, N沟道, 83.2 A, 650 V, 0.033 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 87 A, 75 V, 0.006 ohm, 10 V, 3.7 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, X2-Class, N沟道, 12 A, 650 V, 0.3 ohm, 10 V, 4.5 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, LINEAR L2?, N沟道, 15 A, 500 V, 480 mohm, 10 V, 2.5 V

NTE ELECTRONICS

双向晶闸管, 200V V(DRM), 40A I(T)RMS

ROHM

单晶体管, IGBT, 场截止沟道, 85 A, 1.6 V, 277 W, 650 V, TO-247N, 3 引脚

DIODES INC.

肖特基整流器, TRENCH, 100 V, 30 A, 双共阴极, TO-220AB, 3 引脚, 730 mV

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.56 ohm, 10 V, 4 V

NEXPERIA

单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 500 mA, 160 hFE

ROHM

晶体管, MOSFET, 低栅极阈值电压, N沟道, 4 A, 30 V, 66 mohm, 4.5 V, 1.5 V

LITTELFUSE

晶闸管, 800 V, 30 mA, 12 A, 12 A, TO-220AB, 3 引脚

ROHM

单晶体管 双极, PNP, -50 V, 140 MHz, 150 mW, -150 mA, 120 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 120 A, 100 V, 0.00445 ohm, 10 V, 1.7 V

FUJI ELECTRIC

功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 120 A, 40 V, 5.5 mohm, 10 V, 4 V