DIODES INC.

单晶体管 双极, PNP, 40 V, 145 MHz, 2.5 W, 3 A, 450 hFE

INFINEON

晶体管, MOSFET, N沟道, 42 A, 75 V, 0.0218 ohm, 10 V, 2 V

NEXPERIA

单晶体管 双极, NPN, 60 V, 180 MHz, 500 mW, 1 A, 63 hFE

ON SEMICONDUCTOR/FAIRCHILD

功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.32 ohm, 10 V, 5 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 33 A, 250 V, 0.077 ohm, 10 V, 3 V

INFINEON

单晶体管, IGBT, 80 A, 1.85 V, 305 W, 600 V, TO-247, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 170 A, 75 V, 4.5 mohm, 10 V, 4 V

INFINEON

单晶体管, IGBT, 36 A, 1.65 V, 206 W, 600 V, TO-220, 3 引脚

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, X2-Class, N沟道, 120 A, 650 V, 0.023 ohm, 10 V, 5 V

NTE ELECTRONICS

单晶体管 双极, NPN, 500 V, 175 W, 20 A, 40 hFE

ROHM

Silicon Carbide Power MOSFET, N Channel, 30 A, 650 V, 0.08 ohm, 18 V, 5.6 V

STMICROELECTRONICS

场效应管, MOSFET, N沟道, 900V, 8A, TO-220

VISHAY

小信号肖特基二极管, 双共阴极, 45 V, 60 A, 640 mV, 320 A, 150 °C

ON SEMICONDUCTOR/FAIRCHILD

单管二极管 齐纳, 10 V, 350 mW, SOT-23, 5 %, 3 引脚, 150 °C

INFINEON

晶体管, MOSFET, N沟道, 64 A, 55 V, 8 mohm, 10 V, 4 V

MULTICOMP

单晶体管 双极, NPN, 350 V, 5 MHz, 80 W, 5 A, 75 hFE

ON SEMICONDUCTOR

单晶体管 双极, 达林顿, NPN, 60 V, 200 MHz, 40 W, 4 A, 750 hFE

NEXPERIA

单管二极管 齐纳, 3.9 V, 250 mW, SOT-23, 5 %, 3 引脚, 150 °C

INFINEON

单晶体管, IGBT, 15 A, 2.2 V, 110 W, 1.2 kV, TO-247, 3 引脚

INFINEON

功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.404 ohm, 10 V, 3.5 V

INFINEON

单晶体管, IGBT, 90 A, 1.7 V, 325 W, 650 V, TO-247AC, 3 引脚

INFINEON

单晶体管, IGBT, N通道, 6.3 A, 1.95 V, 35 W, 600 V, TO-252AA, 3 引脚

INTERNATIONAL RECTIFIER

场效应管, N 通道, MOSFET, 55V, 104A, D2-PAK

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, X2-Class, N沟道, 4 A, 650 V, 0.85 ohm, 10 V, 5 V

NTE ELECTRONICS

双极性晶体管, TO-220