STMICROELECTRONICS

晶体管, MOSFET, N沟道, 6 A, 500 V, 340 mohm, 10 V, 3.75 V

ROHM

单晶体管 双极, AEC-Q101, PNP, -50 V, 320 MHz, 2 W, -2 A, 180 hFE

ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道, 250V

INFINEON

单晶体管, IGBT, 通用, 16 A, 2.2 V, 70 W, 1.2 kV, TO-247, 3 引脚

INFINEON

晶体管, MOSFET, P沟道, 40 A, -100 V, 60 mohm, -10 V, 4 V

VISHAY

晶体管, MOSFET, N沟道, 11 A, 400 V, 550 mohm, 10 V, 4 V

IXYS SEMICONDUCTOR

单晶体管, IGBT, 33 A, 2.1 V, 130 W, 1.2 kV, TO-220AB, 3 引脚

IXYS SEMICONDUCTOR

Silicon Carbide IGBT Single Transistor, 40 A, 2.5 V, 180 W, 1.2 kV, TO-247AD, 3 Pins

NTE ELECTRONICS

晶体管, PNP, 1A, TO-1

ROHM

单晶体管, IGBT, 场截止沟道, 16 A, 1.65 V, 94 W, 650 V, TO-263S, 3 引脚

ROHM

Silicon Carbide Power MOSFET, N Channel, 72 A, 1.2 kV, 0.03 ohm, 18 V, 5.6 V

TOSHIBA

功率场效应管, MOSFET, N沟道, 40 A, 600 V, 0.065 ohm, 10 V, 3 V

DIODES INC.

晶体管, MOSFET, P沟道, 3.7 A, -70 V, 160 mohm, 10 V, -1 V

NTE ELECTRONICS

双向晶闸管, 20A

VISHAY

齐纳二极管, 9.1V, 225mW, SOT-23

INFINEON

晶体管, MOSFET, N沟道, 75 A, 40 V, 4.3 mohm, 10 V, 2 V

DIODES INC.

单晶体管 双极, NPN, 20 V, 150 MHz, 600 mW, 100 mA, 330 hFE

INFINEON

单晶体管, IGBT, 50 A, 2 V, 333 W, 600 V, TO-247, 3 引脚

INFINEON

单晶体管, IGBT, 40 A, 2.05 V, 303 W, 600 V, TO-247, 3 引脚

INFINEON

晶体管, MOSFET, N沟道, 140 A, 75 V, 7 mohm, 10 V, 4 V

VISHAY

晶体管, MOSFET, P沟道, 1.1 A, -100 V, 1.2 ohm, -10 V, -4 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 24 A, 900 V, 0.42 ohm, 10 V, 3.5 V

IXYS SEMICONDUCTOR

功率场效应管, MOSFET, N沟道, 50 A, 600 V, 0.16 ohm, 10 V, 5 V

IXYS SEMICONDUCTOR

晶体管, MOSFET, HiPerFET, N沟道, 52 A, 300 V, 60 mohm, 10 V, 4 V

NTE ELECTRONICS

双极晶体管