
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.7 A, -8 V, 0.039 ohm, -4.5 V, -1 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 20 V, 0.055 ohm, 4.5 V, 900 mV

ROHM
Silicon Carbide Power MOSFET, N Channel, 93 A, 650 V, 0.022 ohm, 18 V, 5.6 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V

NEXPERIA
单晶体管 双极, 通用, PNP, -45 V, 80 MHz, 250 mW, -500 mA, 100 hFE

ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -150 V, 300 MHz, 225 mW, -500 mA, 50 hFE

ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1 A, -20 V, 0.148 ohm, -10 V, -1.9 V

NEXPERIA
单管二极管 齐纳, 43 V, 250 mW, TO-236AB, 5 %, 3 引脚, 150 °C

NEXPERIA
单管二极管 齐纳, 9.1 V, 250 mW, TO-236AB, 5 %, 3 引脚, 150 °C

ON SEMICONDUCTOR
单管二极管 齐纳, 18 V, 225 mW, SOT-23, 6 %, 3 引脚, 150 °C

ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3.9 A, 600 V, 1 ohm, 10 V, 5 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 500 V, 230 mohm, 10 V, 5 V

INFINEON
单晶体管, IGBT, IRG4, 8.5 A, 600 V, 38 W, 600 V, TO-220AB, 3 引脚