
ON SEMICONDUCTOR
射频双极晶体管

ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2.2 A, 600 V, 4 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.133 ohm, 10 V, 5 V

STMICROELECTRONICS
单晶体管, IGBT, 20 A, 1.55 V, 115 W, 650 V, TO-263, 3 引脚

INFINEON
晶体管, MOSFET, N沟道, 11.6 A, 560 V, 0.34 ohm, 10 V, 3 V

VISHAY
晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V

NEXPERIA
单晶体管 双极, AEC-Q101, NPN, 45 V, 100 MHz, 280 mW, 100 mA, 420 hFE

VISHAY
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.104 ohm, 10 V, 2 V

ON SEMICONDUCTOR
射频双极晶体管

INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 150V, 27A, TO-220AB

INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0048 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 60 V, 0.0061 ohm, 10 V, 4 V

INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0033 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 500V, 0.65OHM, 9A, TO-263-3

PANASONIC ELECTRONIC COMPONENTS
DIODE, ULTRAFAST RECOVERY, 1A, 30V, SOT-23

INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 100V, 10A, D-PAK