
NEXPERIA
单晶体管 双极, PNP, -500 V, 50 MHz, 300 mW, -150 mA, 160 hFE

ON SEMICONDUCTOR
单晶体管 双极, PNP, -30 V, 100 MHz, 150 mW, -100 mA, 220 hFE

VISHAY
晶体管, P沟道

STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0025 ohm, 10 V, 2 V

ON SEMICONDUCTOR
单晶体管 双极, PNP, -45 V, 100 MHz, 460 mW, -500 mA, 250 hFE

ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 0.026Ω, 2.7A, SUPERSOT-3

ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -80 V, 50 MHz, 150 mW, -500 mA, 100 hFE

ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1.37 A, -20 V, 120 mohm, -4.5 V, -640 mV

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.6 A, -30 V, 200 mohm, -10 V, -1.9 V

NXP
射频晶体管, PNP

VISHAY
晶体管, MOSFET, P沟道, -110 A, -40 V, 0.0041 ohm, -10 V, -3 V

DIODES INC.
晶体管, MOSFET, AEC-Q101, N沟道, 630 mA, 20 V, 0.3 ohm, 4.5 V, 1 V

VISHAY
晶体管, MOSFET, N沟道, 200 mA, 240 V, 2.2 ohm, 10 V, 1.65 V

VISHAY
场效应管, MOSFET, N沟道

NEXPERIA
单晶体管 双极, AEC-Q101, PNP, -60 V, 100 MHz, 250 mW, -100 mA, 220 hFE

VISHAY
晶体管, MOSFET, N沟道, 5.2 A, 30 V, 0.034 ohm, 4.5 V, 400 mV