
INFINEON
晶体管, MOSFET, N沟道, 41 A, 150 V, 45 mohm, 10 V, 5.5 V

INFINEON
单晶体管, IGBT, 78 A, 600 V, 370 W, 600 V, TO-262, 3 引脚

ON SEMICONDUCTOR
单晶体管, IGBT, 50 A, 1.85 V, 192 W, 1.2 kV, TO-247, 3 引脚

INFINEON
单晶体管, IGBT, 78 A, 2.35 V, 370 W, 600 V, TO-220AB, 3 引脚

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2.4 A, -20 V, 52 mohm, -4.5 V, -800 mV

ROHM
晶体管, MOSFET, P沟道, -2.5 A, -30 V, 0.07 ohm, -10 V, -2.5 V

ROHM
Silicon Carbide Power MOSFET, N Channel, 17 A, 1.2 kV, 0.16 ohm, 18 V, 5.6 V

ON SEMICONDUCTOR
二极管 小信号, 双系列, 70 V, 150 mA, 1.25 V, 6 ns, 500 mA

ROHM
功率场效应管, MOSFET, 碳化硅 (SiC), N沟道, 3.7 A, 1.7 kV, 1.15 ohm, 18 V, 2.8 V

ON SEMICONDUCTOR
二极管 小信号, 双共阴极, 70 V, 200 mA, 1.1 V, 4 ns, 500 mA

INFINEON
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0026 ohm, 10 V, 3 V

STMICROELECTRONICS
晶体管, 射频FET, 65 V, 1 A, 20 W, 925 MHz, 960 MHz, SOIC

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 48 A, 500 V, 0.089 ohm, 10 V, 5 V

ROHM
单晶体管 双极, NPN, 120 V, 140 MHz, 200 mW, 50 mA, 180 hFE

INFINEON
单晶体管, IGBT, 220 A, 2 V, 1.15 kW, 1.2 kV, TO-274AA, 3 引脚

ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2 A, 1.5 kV, 10 ohm, 10 V, 3.5 V