
DIODES INC.
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2 ohm, 10 V, 1.6 V

DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -400 mA, -20 V, 0.7 ohm, -4.5 V, -500 mV

DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -3.6 A, -20 V, 0.023 ohm, -4.5 V, -700 mV

DIODES INC.
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 75 mohm, -4.5 V, -600 mV

DIODES INC.
晶体管, MOSFET, P沟道, -2.7 A, -20 V, 100 mohm, -4.5 V, -890 mV

DIODES INC.
晶体管, MOSFET, P沟道, 4.2 A, -20 V, 45 mohm, -4.5 V, -500 mV

DIODES INC.
晶体管, MOSFET, P沟道, 16.1 A, -30 V, 25 mohm, -10 V, -1 V

DIODES INC.
晶体管, MOSFET, P沟道, 3.8 A, -30 V, 56 mohm, -10 V, -1.8 V

DIODES INC.
晶体管, MOSFET, P沟道, 3.5 A, -30 V, 59 mohm, -10 V, -600 mV

DIODES INC.
单晶体管 双极, NPN, 350 V, 50 MHz, 300 mW, 500 mA, 30 hFE

DIODES INC.
单晶体管 双极, NPN, 60 V, 150 MHz, 600 mW, 1 A, 100 hFE

IXYS SEMICONDUCTOR
小信号肖特基二极管, 双共阴极, 150 V, 10 A, 740 mV, 60 A, 175 °C

IXYS SEMICONDUCTOR
小信号肖特基二极管, 双共阴极, 150 V, 15 A, 750 mV, 120 A, 175 °C

IXYS SEMICONDUCTOR
小信号肖特基二极管, 双共阴极, 60 V, 30 A, 680 mV, 260 A, 175 °C

IXYS SEMICONDUCTOR
小信号肖特基二极管, 双共阴极, 100 V, 40 A, 730 mV, 400 A, 175 °C

DIODES INC.
单晶体管 双极, PNP, 20 V, 100 MHz, 600 mW, 2 A, 250 hFE

DIODES INC.
单晶体管 双极, NPN, 20 V, 150 MHz, 600 mW, 100 mA, 330 hFE