ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 21 A, 30 V, 28 mohm, 10 V, 1.7 V

VISHAY

晶体管, MOSFET, N沟道, 19 A, 200 V, 90 mohm, 10 V, 4 V

NEXPERIA

单晶体管 双极, NPN, 80 V, 110 MHz, 700 mW, 5.1 A, 470 hFE

NEXPERIA

晶体管, MOSFET, N沟道, 70 A, 120 V, 0.0062 ohm, 10 V, 3 V

VISHAY

功率场效应管, MOSFET, N沟道, 33 A, 600 V, 0.083 ohm, 10 V, 2 V

DIODES INC.

单管二极管 齐纳, 3 V, 350 mW, SOT-23, 7 %, 3 引脚, 150 °C

NEXPERIA

晶体管, MOSFET, P沟道, -3.2 A, -12 V, 0.059 ohm, -4.5 V, -680 mV

NEXPERIA

二极管 小信号, 单, 250 V, 200 mA, 1.25 V, 50 ns, 9 A

VISHAY

晶体管, MOSFET, N沟道, 4.8 A, 200 V, 800 mohm, 10 V, 4 V

INFINEON

晶体管, MOSFET, N沟道, 160 A, 30 V, 3.1 mohm, 10 V, 1.9 V

NEXPERIA

晶体管, MOSFET, N沟道, 32 A, 30 V, 0.017 ohm, 10 V, 1.7 V

DIODES INC.

单晶体管 双极, NPN, 65 V, 300 MHz, 200 mW, 100 mA, 290 hFE

INTERNATIONAL RECTIFIER

场效应管, MOSFET, N沟道, 200V, 18A, TO-220AB

MULTICOMP

二极管, 超快恢复型, 300mA, 75V, SOT-23-3

INTERNATIONAL RECTIFIER

晶体管, 单路, IGBT, 600V, 13A

ROHM

晶体管, MOSFET, AEC-Q101, N沟道, 1 A, 100 V, 0.37 ohm, 10 V, 2.5 V

VISHAY

场效应管, MOSFET, P沟道, -60V, 185mA, TO-236

VISHAY

小信号肖特基二极管, 双共阴极, 30 V, 200 mA, 800 mV, 600 mA, 125 °C

ON SEMICONDUCTOR/FAIRCHILD

单晶体管 双极, NPN, 80 V, 100 MHz, 625 mW, 500 mA, 100 hFE

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 16 A, 60 V, 0.07 ohm, 10 V, 1 V

NEXPERIA

单晶体管 双极, NPN, 80 V, 180 MHz, 500 mW, 1 A, 100 hFE

DIODES INC.

小信号肖特基二极管, 双系列, 20 V, 500 mA, 430 mV, 2 A, 125 °C

DIODES INC.

晶体管, MOSFET, P沟道, -3.3 A, -20 V, 0.06 ohm, -4.5 V, -600 mV

NEXPERIA

晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.027 ohm, -4.5 V, -700 mV

INTERNATIONAL RECTIFIER

场效应管, P通道, MOSFET, -55V, 11A, IPAKS