
VISHAY
晶体管, MOSFET, P沟道, 7.7 A, -30 V, 0.025 ohm, -10 V, -600 mV

INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V

VISHAY
场效应管, MOSFET, N沟道

NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 61 A, 25 V, 0.00584 ohm, 10 V, 1.76 V

NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00153 ohm, 10 V, 1.8 V

VISHAY
场效应管, MOSFET, N沟道

ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 场截止沟道, 150 A, 1.6 V, 455 W, 650 V, TO-247, 4 引脚

NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00182 ohm, 10 V, 1.68 V

TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.2 A, -12 V, 0.044 ohm, -4.5 V, -600 mV

NEXPERIA
单晶体管 双极, AEC-Q101, PNP, -100 V, 116 MHz, 1.3 W, -6 A, 10 hFE

VISHAY
整流桥

VISHAY
整流桥

VISHAY
桥式整流器, 单相, 6A, 100V 通孔安装