DIODES INC.

双路场效应管, MOSFET, AEC-Q101, 双N沟道, 280 mA, 50 V, 2 ohm, 5 V, 1 V

NXP

场效应管, MOSFET, 射频, N通道, 40V, TO-272

DIODES INC.

晶体管, MOSFET, P沟道, -4.6 A, -20 V, 0.029 ohm, -4.5 V, 960 mV

VISHAY

双路场效应管, MOSFET, 双N沟道, 1.5 A, 20 V, 0.18 ohm, 4.5 V, 400 mV

TEXAS INSTRUMENTS

双路场效应管, MOSFET, 双N沟道, 8 A, 12 V, 0.0099 ohm, 4.5 V, 950 mV

DIODES INC.

双路场效应管, MOSFET, N和P沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2.5 V

NEXPERIA

双极晶体管阵列, 双NPN, 60 V, 510 mW, 1 A, 70 hFE, SOT-1118

VISHAY

晶体管, MOSFET, P沟道, -12 A, -20 V, 0.025 ohm, -4.5 V, -400 mV

VISHAY

晶体管, MOSFET, P沟道, -1.6 A, -60 V, 0.23 ohm, -10 V, -2 V

VISHAY

MOSFET, DUAL P CHANNEL, -20V, -1.3A, SOT-363-6

NEXPERIA

单晶体管 双极, NPN, 65 V, 100 MHz, 200 mW, 100 mA, 200 hFE

ROHM

双路场效应管, MOSFET, N和P沟道, 200 mA, 20 V, 0.7 ohm, 4 V, 1 V

ROHM

二极管 小信号, 双对串联, 80 V, 100 mA, 1.2 V, 4 A

NEXPERIA

双极晶体管阵列, BISS 负载开关, NPN, PNP, 40 V, 200 mW, -500 mA, 200 hFE, SOT-363

ROHM

小信号肖特基二极管, 三独立式, 30 V, 100 mA, 530 mV, 1 A, 125 °C

ROHM

小信号肖特基二极管, 三独立式, 40 V, 30 mA, 370 mV, 200 mA, 125 °C

DIODES INC.

双极晶体管阵列, NPN, 160 V, 300 mW, 200 mA, 80 hFE, SOT-26

ON SEMICONDUCTOR

MOSFET Transistor, N Channel, 2.5 A, 20 V, 0.036 ohm, 4.5 V, 850 mV

VISHAY

晶体管, MOSFET, P沟道, -29.7 A, -20 V, 0.012 ohm, -4.5 V, -400 mV

ROHM

双路场效应管, MOSFET, 双N沟道, 200 mA, 50 V, 1.6 ohm, 4.5 V, 1 V

ON SEMICONDUCTOR

二极管 小信号, 三独立式, 250 V, 200 mA, 1.25 V, 50 ns, 625 mA

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -7.8 A, -20 V, 0.019 ohm, -5 V, -500 mV

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 7 A, 20 V, 0.019 ohm, 4.5 V, 700 mV

NEXPERIA

小信号肖特基二极管, 三独立式, 15 V, 30 mA, 700 mV, 125 °C

NEXPERIA

双极晶体管阵列, NPN, 45 V, 380 mW, 100 mA, 290 hFE, SOT-457