VISHAY

晶体管, MOSFET, P沟道, -3.9 A, -20 V, 0.041 ohm, -2.5 V, -1.4 V

NEXPERIA

双极晶体管阵列, 通用, NPN, PNP, 50 V, 180 mW, 150 mA, 250 hFE, SOT-363

NEXPERIA

小信号肖特基二极管, 单, 60 V, 1 A, 650 mV, 17.5 A, 150 °C

NEXPERIA

双极晶体管阵列, 通用, NPN, 15 V, 200 mW, 500 mA, 200 hFE, SOT-666

TEXAS INSTRUMENTS

晶体管, MOSFET, P沟道, -3 A, -20 V, 0.027 ohm, -4.5 V, -800 mV

VISHAY

MOSFET, P CHANNEL, -20V, -9A, POWERPAK SC75-6

ROHM

小信号肖特基二极管, 三独立式, 40 V, 30 mA, 370 mV, 200 mA, 125 °C

VISHAY

场效应管, MOSFET, P沟道, -30V, 12A, SC-70

VISHAY

晶体管, MOSFET, N沟道, 1.2 A, 150 V, 0.31 ohm, 10 V, 4 V

NEXPERIA

双极晶体管阵列, PNP, 45 V, 200 mW, -100 mA, 290 hFE, SOT-666

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -3 A, -20 V, 66 mohm, -4.5 V, -900 mV

ROHM

晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.038 ohm, 4.5 V, 1.5 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V

NEXPERIA

单晶体管 双极, NPN, PNP, 30 V, 120 MHz, 2 W, 2 A, 150 hFE

DIODES INC.

单晶体管 双极, PNP, 12 V, 55 MHz, 1.1 W, 4 A, 500 hFE

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双P沟道, -3.6 A, -20 V, 0.04 ohm, -4.5 V, -500 mV

DIODES INC.

双路场效应管, MOSFET, 双N沟道, 200 mA, 50 V, 3.5 ohm, 10 V, 1.2 V

NEXPERIA

晶体管, MOSFET, P沟道, -4.1 A, -20 V, 0.048 ohm, -4.5 V, -1 V

VISHAY

晶体管, MOSFET, N沟道, 12 A, 30 V, 0.014 ohm, 10 V, 1 V

ROHM

双极晶体管阵列, 双路, NPN, PNP, 50 V, 150 mW, 150 mA, 120 hFE, SOT-363

NEXPERIA

晶体管, MOSFET, 沟槽式, N沟道, 4.5 A, 30 V, 0.033 ohm, 4.5 V, 650 mV

ROHM

晶体管, MOSFET, N沟道, 4.5 A, 30 V, 0.027 ohm, 10 V, 2.5 V

VISHAY

晶体管, MOSFET, N沟道, 7.9 A, 20 V, 0.023 ohm, 4.5 V, 400 mV

VISHAY

晶体管, MOSFET, N沟道, 6.3 A, 30 V, 33 mohm, 10 V, 1.2 V

ROHM

晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.045 ohm, -10 V, -2.5 V