NEXPERIA

双路场效应管, MOSFET, 双N沟道, 320 mA, 60 V, 0.9 ohm, 10 V, 1.2 V

DIODES INC.

双路场效应管, MOSFET, N和P沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2.5 V

NEXPERIA

双路场效应管, MOSFET, 双P沟道, -160 mA, -50 V, 4.5 ohm, -10 V, -1.6 V

NEXPERIA

晶体管, MOSFET, P沟道, -170 mA, -50 V, 4.5 ohm, -10 V, -1.6 V

DIODES INC.

双路场效应管, MOSFET, 双P沟道, -130 mA, -50 V, 10 ohm, -5 V, -1.6 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 5 A, 25 V, 0.019 ohm, 8 V, 1.2 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V

TEXAS INSTRUMENTS

晶体管, MOSFET, P沟道, -3 A, -8 V, 0.0162 ohm, -4.5 V, -800 mV

TEXAS INSTRUMENTS

晶体管, MOSFET, P沟道, -5 A, -20 V, 39 mohm, -4.5 V, -650 mV

TEXAS INSTRUMENTS

晶体管, MOSFET, P沟道, -5 A, -20 V, 39 mohm, -4.5 V, -650 mV

TEXAS INSTRUMENTS

晶体管, MOSFET, P沟道, -3 A, -20 V, 0.027 ohm, -4.5 V, -800 mV

TEXAS INSTRUMENTS

双路场效应管, MOSFET, 双P沟道, -1.2 A, -20 V, 95 mohm, -4.5 V, -650 mV

TEXAS INSTRUMENTS

双路场效应管, MOSFET, 双P沟道, -1.6 A, -20 V, 0.056 ohm, -4.5 V, -800 mV

TEXAS INSTRUMENTS

双路场效应管, MOSFET, 双P沟道, -1.6 A, -20 V, 0.056 ohm, -4.5 V, -800 mV

TEXAS INSTRUMENTS

双路场效应管, MOSFET, 双P沟道, -1.6 A, -20 V, 0.056 ohm, -4.5 V, -800 mV

TEXAS INSTRUMENTS

双路场效应管, MOSFET, 双N沟道, 8 A, 12 V, 0.0099 ohm, 4.5 V, 950 mV

TEXAS INSTRUMENTS

双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.023 ohm, 4.5 V, 900 mV

IXYS RF

晶体管, 射频FET, 1 kV, 12 A, 940 W, 50 MHz, DE-375

DIODES INC.

双路场效应管, MOSFET, 增强模式, N和P沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 500 mV

DIODES INC.

双极晶体管阵列, 双路, NPN, 40 V, 200 mW, 200 mA, 100 hFE, SOT-363

DIODES INC.

双极晶体管阵列, 双路, PNP, -40 V, 200 mW, -200 mA, 100 hFE, SOT-363

DIODES INC.

双极晶体管阵列, PNP, -150 V, 300 mW, -200 mA, 60 hFE, SOT-26

DIODES INC.

双极晶体管阵列, NPN, 160 V, 300 mW, 200 mA, 80 hFE, SOT-26