DIODES INC.

晶体管, MOSFET, N沟道, 9.8 A, 20 V, 11 mohm, 4.5 V, 1 V

INFINEON

晶体管, MOSFET, N沟道, 10 A, 30 V, 0.0092 ohm, 10 V, 2 V

DIODES INC.

双路场效应管, MOSFET, AEC-Q101, 双路N和P通道, 6 A, 30 V, 0.019 ohm, 10 V, 2 V

VISHAY

晶体管, MOSFET, P沟道, -9 A, -30 V, 0.026 ohm, -10 V, -2.5 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 4.9 A, 150 V, 0.04 ohm, 10 V, 4 V

VISHAY

场效应管, MOSFET, N沟道, 60V, 8A, SOIC

INTERNATIONAL RECTIFIER

场效应管, MOSFET

INFINEON

晶体管, MOSFET, N沟道, 55 A, 100 V, 0.0126 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双N沟道, 60 A, 30 V, 0.0013 ohm, 10 V, 1.5 V

VISHAY

晶体管, MOSFET, N沟道, 53.7 A, 150 V, 0.0148 ohm, 10 V, 4.5 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, -18 A, -20 V, 0.0064 ohm, -4.5 V, -500 mV

INFINEON

晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0012 ohm, 10 V, 2.8 V

INFINEON

场效应管, MOSFET

VISHAY

晶体管, MOSFET, N沟道, 53.7 A, 150 V, 0.0148 ohm, 10 V, 1.5 V

NEXPERIA

双极晶体管阵列, NPN, 60 V, 2.3 W, 6.7 A, 300 hFE, SOIC

VISHAY

晶体管, MOSFET, N沟道, 6 A, 60 V, 18 mohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 10.8 A, 30 V, 0.011 ohm, 4.5 V, 3 V

VISHAY

晶体管, MOSFET, N沟道, 40 A, 100 V, 0.011 ohm, 10 V, 1.2 V

NEXPERIA

双极晶体管阵列, AEC-Q101, 双PNP, -100 V, 1.25 W, -3 A, 10 hFE, SOT-1205

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 27 A, 40 V, 0.0019 ohm, 10 V, 1.8 V

VISHAY

晶体管, MOSFET, P沟道, -50 A, -30 V, 4.2 mohm, -10 V, -1.2 V

INFINEON

晶体管, MOSFET, N沟道, 8.7 A, 20 V, 22 mohm, 4.5 V, 700 mV

VISHAY

双路场效应管, MOSFET, 双N沟道, 16 A, 30 V, 0.0075 ohm, 10 V, 1 V

STMICROELECTRONICS

小信号肖特基二极管, 单, 100 V, 30 A, 840 mV, 250 A, 150 °C

INFINEON

双路场效应管, MOSFET, 双P沟道, -2.3 A, -20 V, 0.19 ohm, -10 V, -3 V