
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 40 V, 0.0014 ohm, 10 V, 2 V

INFINEON
晶体管, MOSFET, N沟道, 17.2 A, 30 V, 5.6 mohm, 10 V, 2.2 V

TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V

DIODES INC.
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.012 ohm, 10 V, 1.6 V

TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 4.4 mohm, 4.5 V, 1.1 V

VISHAY
晶体管, MOSFET, N沟道, 9.6 A, 60 V, 0.009 ohm, 10 V, 4 V

ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 6 A, -30 V, 0.025 ohm, -10 V, -1.7 V

TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0078 ohm, 10 V, 1.9 V

DIODES INC.
晶体管, MOSFET, N沟道, 5.4 A, 20 V, 40 mohm, 4.5 V, 700 mV

DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 6.7 A, 30 V, 0.011 ohm, 10 V, 1.2 V

INFINEON
晶体管, MOSFET, P沟道, -5.4 A, -30 V, 48 mohm, -10 V, -1.8 V

INFINEON
晶体管, MOSFET, P沟道, -6.7 A, -20 V, 0.04 ohm, -4.5 V, -700 mV

VISHAY
晶体管, MOSFET, N沟道, 19 A, 40 V, 0.0074 ohm, 10 V, 1 V