ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 13 A, 30 V, 11.3 mohm, 10 V, 1.8 V

INFINEON

晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0055 ohm, 10 V, 2.25 V

DIODES INC.

双路场效应管, MOSFET, 双N沟道, 3.2 A, 60 V, 180 mohm, 10 V, 1 V

INFINEON

双路场效应管, MOSFET, 双N沟道, 6.6 A, 20 V, 29 mohm, 4.5 V, 700 mV

INFINEON

晶体管, MOSFET, P沟道, 5.2 A, -30 V, 45 mohm, -10 V, -1 V

ANALOG DEVICES

单管二极管 齐纳, 500 mW, SOIC, 8 引脚, 85 °C

VISHAY

晶体管, MOSFET, P沟道, -11.4 A, -30 V, 0.0195 ohm, -10 V, -3 V

VISHAY

双路场效应管, MOSFET, 双N沟道, 160 A, 40 V, 0.0036 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, P沟道, 10.5 A, -40 V, 15 mohm, 10 V, 3 V

ANALOG DEVICES

双极晶体管阵列, NPN, 40 V, 20 mA, 300 hFE, SOIC

VISHAY

晶体管, MOSFET, N沟道, 16 A, 40 V, 0.008 ohm, 10 V, 2 V

INFINEON

晶体管, MOSFET, P沟道, -9.2 A, -30 V, 15.6 mohm, -10 V, -1.8 V

ROHM

晶体管, MOSFET, N沟道, 39 A, 40 V, 0.005 ohm, 10 V, 2.5 V

INFINEON

晶体管, MOSFET, P沟道, 5.3 A, -20 V, 60 mohm, -10 V, -2.5 V

NEXPERIA

双路场效应管, MOSFET, 双P沟道, -4.5 A, -20 V, 0.058 ohm, -4.5 V, -700 mV

TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0035 ohm, 10 V, 1.4 V

INFINEON

双路场效应管, MOSFET, 双P沟道, 3 A, -30 V, 100 mohm, -10 V, -1 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.019 ohm, 10 V, 1.9 V

INFINEON

晶体管, MOSFET, P沟道, -12 A, -30 V, 10 mohm, -10 V, -1.8 V

VISHAY

场效应管, MOSFET, N沟道, 40V, 60A, POWERPAKSO-8

INFINEON

晶体管, MOSFET, N沟道, 21 A, 60 V, 3.5 mohm, 10 V, 4 V

ROHM

双路场效应管, MOSFET, 双P沟道, -4 A, -30 V, 0.04 ohm, -10 V, -2.5 V

ROHM

晶体管, MOSFET, P沟道, -7 A, -30 V, 0.012 ohm, -10 V, -2.5 V

VISHAY

晶体管, MOSFET, N沟道, 10.9 A, 30 V, 20 mohm, 10 V, 1 V

ROHM

双路场效应管, MOSFET, 双P沟道, -2.5 A, -30 V, 0.06 ohm, -10 V, -2.5 V