ON SEMICONDUCTOR/FAIRCHILD

场效应管, MOSFET, N沟道+P沟道, 35V, SOIC

DIODES INC.

双路场效应管, MOSFET, P沟道, -5.2 A, -60 V, 0.034 ohm, -10 V, -3 V

VISHAY

MOSFET, DUAL P CHANNEL, -20V, 0.0275OHM, -8A, SOIC-8

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 双N沟道, 7 A, 35 V, 24 mohm, 10 V, 2 V

VISHAY

双路场效应管, MOSFET, 双N沟道, 60 A, 40 V, 0.0048 ohm, 10 V, 2.5 V

VISHAY

场效应管, MOSFET, P沟道, -80V, 28A, SOIC

STMICROELECTRONICS

标准恢复二极管, 单, 200 V, 30 A, 1.15 V, 50 ns, 300 A

DIODES INC.

晶体管, MOSFET, N沟道, 30 A, 40 V, 0.0092 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 300 A, 80 V, 0.001 ohm, 10 V, 3 V

INFINEON

晶体管, MOSFET, N沟道, 300 A, 100 V, 0.0017 ohm, 10 V, 2.7 V

INFINEON

晶体管, MOSFET, N沟道, 115 A, 150 V, 0.005 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, P沟道, 9 A, -30 V, 17 mohm, -10 V, -1.7 V

TEXAS INSTRUMENTS

场效应管, MOSFET, N沟道, 100V, 100A, VSON-8

VISHAY

MOSFET, P CHANNEL, -20V, -4.9A, SOIC-8

VISHAY

晶体管, MOSFET, N沟道, 6.8 A, 100 V, 51 mohm, 10 V, 2 V

NEXPERIA

晶体管, MOSFET, N沟道, 43 A, 80 V, 0.014 ohm, 10 V, 3 V

NEXPERIA

晶体管, MOSFET, N沟道, 47 A, 60 V, 0.011 ohm, 10 V, 1.7 V

NEXPERIA

晶体管, MOSFET, N沟道, 9.3 A, 100 V, 0.12 ohm, 10 V, 1.7 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 70 A, 30 V, 0.0032 ohm, 10 V, 1.63 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 64 A, 30 V, 0.0028 ohm, 10 V, 1.6 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 44 A, 30 V, 0.0059 ohm, 10 V, 2.2 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 51 A, 40 V, 0.0061 ohm, 10 V, 2.2 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 51 A, 40 V, 0.0061 ohm, 10 V, 2.2 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 109 A, 60 V, 0.0042 ohm, 10 V, 2.2 V

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 109 A, 60 V, 0.0042 ohm, 10 V, 2.2 V