规格：针脚数 8引脚,
STMICROELECTRONICS
功率场效应管, MOSFET
(EN)
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 3 A, 30 V, 0.09 ohm, 10 V, 1.7 V
(EN)
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V
(EN)STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 2.5 A, 20 V, 30 mohm, 4.5 V, 2.7 V
(EN)STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 2.5 A, 20 V, 30 mohm, 4.5 V, 2.7 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6 A, 20 V, 45 mohm, 2.7 V, 600 mV
(EN)
STMICROELECTRONICS
标准恢复二极管, 单, 300 V, 8 A, 1.3 V, 50 ns, 280 A
(EN)TOSHIBA
晶体管, MOSFET, P沟道, -18 A, -30 V, 0.0026 ohm, -10 V, -800 mV
(EN)TOSHIBA
晶体管, MOSFET, 功率, P沟道, -12 A, -40 V, 0.0061 ohm, -10 V, -800 mV
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 18 A, 100 V, 0.041 ohm, 10 V, 5 V
(EN)TOSHIBA
晶体管, MOSFET, N沟道, 18 A, 100 V, 0.041 ohm, 10 V, 5 V
(EN)TOSHIBA
晶体管, MOSFET, 功率, N沟道, 35 A, 60 V, 0.0043 ohm, 10 V, 1.3 V
(EN)TOSHIBA
晶体管, MOSFET, P沟道, -34 A, -30 V, 0.0037 ohm, -10 V, -800 mV
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, 1.17 A, -15 V, 0.18 ohm, -10 V, -1.25 V
(EN)
DIODES INC.
双极晶体管阵列, 双路补偿高增益, NPN, PNP, 40 V, 2.75 W, 2 A, 500 hFE, SOT-223
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 5.4 A, 20 V, 40 mohm, 4.5 V, 700 mV
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 3.8 A, -30 V, 75 mohm, 10 V, -1 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 6.4 A, 30 V, 35 mohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 4.4 A, 30 V, 70 mohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 3.9 A, 60 V, 105 mohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 3.9 A, 60 V, 105 mohm, 10 V, 1 V
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 2.3 A, 30 V, 135 mohm, 10 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 2.3 A, 30 V, 135 mohm, 10 V, 1 V
(EN)
