MULTICOMP

快速/超快二极管, 200 V, 3 A, 单, 950 mV, 35 ns, 100 A

INFINEON

晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0011 ohm, 10 V, 3 V

ON SEMICONDUCTOR

二极管 小信号, 单, 250 V, 200 mA, 1.25 V, 50 ns, 625 mA

STMICROELECTRONICS

单晶体管 双极, NPN, 100 V, 3 MHz, 125 W, 25 A, 50 hFE

ON SEMICONDUCTOR

晶体管 双极-射频, NPN, 30 V, 100 MHz, 150 mW, 100 mA, 200 hFE

BROADCOM LIMITED

晶体管, 射频FET, 5 V, 100 mA, 270 mW, 450 MHz, 6 GHz, SOT-343

NEXPERIA

快速/超快功率二极管, 双隔离, 300 V, 250 mA, 1.1 V, 4.5 A

ROHM

晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.038 ohm, -10 V, -2.5 V

VISHAY

场效应管, MOSFET, P沟道, -60V, 50A, TO-252

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, AEC-Q101, N沟道, 30 A, 80 V, 0.0172 ohm, 10 V, 2.9 V

INFINEON

晶体管, MOSFET, N沟道, 36 A, 100 V, 0.021 ohm, 10 V, 2 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管 双极-射频, NPN, 12 V, 2 GHz, 225 mW, 50 mA, 25 hFE

ON SEMICONDUCTOR

二极管 小信号, 单, 100 V, 200 mA, 1.25 V, 6 ns, 4 A

DIODES INC.

晶体管, MOSFET, P沟道, -3.8 A, -30 V, 0.065 ohm, -10 V, -2.1 V

INFINEON

晶体管, MOSFET, N沟道, 39 A, 80 V, 28 mohm, 10 V, 2.5 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 16 A, 20 V, 0.004 ohm, 4.5 V, 600 mV

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, 沟, N沟道, 6.1 A, 30 V, 0.026 ohm, 10 V, 1.8 V

NEXPERIA

单晶体管 双极, NPN, 40 V, 150 MHz, 1.1 W, 4 A, 300 hFE

ON SEMICONDUCTOR

单晶体管 双极, NPN, 50 V, 420 MHz, 900 mW, 1 A, 200 hFE

STMICROELECTRONICS

功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V

INFINEON

晶体管 双极-射频, NPN, 4.1 V, 42 GHz, 200 mW, 50 mA, 110 hFE

ROHM

晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 4.7 kohm, 10 kohm, 0.47 电阻比率

ON SEMICONDUCTOR

单晶体管 双极, PNP, -40 V, 100 MHz, 540 mW, -2 A, 150 hFE

ON SEMICONDUCTOR

晶体管, MOSFET, N沟道, 46 A, 30 V, 0.0058 ohm, 10 V, 2.2 V

ON SEMICONDUCTOR

快速/超快二极管, 100 V, 2 A, 940 mV, 30 ns, 50 A