ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 100 mA, 50 V, 6 ohm, 4 V, 1.3 V
PANASONIC ELECTRONIC COMPONENTS
双路场效应管, MOSFET, 双N沟道, 100 mA, 60 V, 6 ohm, 4 V, 1.2 V
INFINEON
晶体管, MOSFET, N沟道, 18 A, 40 V, 5 mohm, 4.5 V, 2.25 V
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 240 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0057 ohm, 10 V, 2 V
晶体管, MOSFET, P沟道, -3 A, -20 V, 0.063 ohm, -4.5 V, -1.3 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.3 A, -60 V, 250 mohm, -10 V, -1.5 V
VISHAY
场效应管, MOSFET, P沟道, -60V, 5A, SOIC
晶体管, 带电阻, 50V, 47K/47KΩ, SOT-23
功率场效应管, MOSFET, N沟道, 1 A, 600 V, 2.8 ohm, 10 V, 4 V
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.1 A, 60 V, 500 mohm, 10 V, 2.1 V
MULTICOMP
单晶体管 双极, NPN, 45 V, 200 MHz, 625 mW, 800 mA, 400 hFE
STMICROELECTRONICS
单晶体管 双极, PNP, 80 V, 1.25 W, 1.5 A, 40 hFE
双路场效应管, MOSFET, N和P沟道, 750 mA, 30 V, 0.25 ohm, 4.5 V, 1 V
单晶体管 双极, 开关, NPN, 40 V, 300 MHz, 200 mW, 200 mA, 100 hFE
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 35 A, 60 V, 0.0043 ohm, 10 V, 1.3 V
TAIWAN SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 1 A, 600 V, 8 ohm, 10 V, 3.5 V
晶体管, MOSFET, N沟道, 2.5 A, 35 V, 0.075 ohm, 10 V, 2.6 V
场效应管, MOSFET, N沟道与P沟道, 30V, 0.25/0.87Ω, 750mA, SC-70-6
ROHM
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 47 kohm, 0.213 电阻比率
MICRO COMMERCIAL COMPONENTS
肖特基整流器, 1A, 20V, SOD-123
单晶体管 双极, PNP, -300 V, 20.8 W, -500 mA, 240 hFE
单晶体管 双极, 音频, NPN, 350 V, 30 MHz, 50 W, 4 A, 100 hFE
双路场效应管, MOSFET, N和P, 2.3 A, 30 V, 0.044 ohm, 10 V, 1.6 V
场效应管, MOSFET, N沟道, 40V, 195A, TO-220AB-3
(EN)
